Analytical approximation for the quantum-well gain and refractive-index spectra of vertical-cavity surface-emitting lasers including the effect of uniaxial planar stress

Starting from a microscopic model in the free-carrier approximation, we derive an analytical approximation for the optical susceptibility of uniaxially stressed quantum-well lasers at low temperatures by neglecting second-order contributions of the band-mixing phenomenon. The resulting polarization-dependent peak gains, differential peak gains, transparency carrier densities, and linewidth enhancement factors as induced by the uniaxial planar stress are discussed. DOI: 10.1103/PhysRevA.71.063801 PACS numberssd: 42.55.Px

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