论文信息 - Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology - 字舞流文

Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology

C. Cagli | C. Carabasse | J. Nodin | J. Cluzel | M. Gros-Jean | M. Mellier | P. Candelier | B. D. Salvo | V. Jousseaume | C. Gaumer | T. Diokh | E. Le-Roux | S. Jeannot