Semiconductor memory device performing auto refresh in the self refresh mode

The multi-bank synchronous dynamic random access memory (SDRAM) circuit modules and device and the driving method used in conjunction with a memory system is provided. In one embodiment, described for example, SDRAM circuit receives a bank address to be used in the auto refresh operation, and performs an auto refresh operation on the specified bank refresh, and the current row. Device of the invention can be entered in the self refresh mode before the auto refresh operation is completed for all the banks, and the current refresh row. In addition, the apparatus of the present invention to complete the refresh operation for the current refresh row before performing a self-refresh operation for the new row.