Low Temperature CVD Growth of Epitaxial HgTe on CdTe

Epitaxial layers of on substrates have been grown by a low temperature metal organic CVD technique at temperatures of 325°–350°C. Thin films of exhibiting good crystalline perfection were formed by the reaction of Hg vapor and dimethyl telluride. Similar techniques may provide an alternative growth method for the epitaxial growth of at low temperatures.