论文信息 - Nonlinear RF Characterization and Modeling of Heterojunction Bipolar Transistors Under Pulsed Conditions

Nonlinear RF Characterization and Modeling of Heterojunction Bipolar Transistors Under Pulsed Conditions

I(V) and S-parameters pulsed measurments have been performed on a heterojunction bipolar transistor for currents up to 105 Amps/cm2. S-parameters data have been acquired in the whole device output domain. So, a nonlinear DC to RF consistent model has been obtained with I(V) and RF pulsed measurements on a GaInP/GaAs HBT transistor, processed by the central research laboratory of Thomson CSF.

D. Floriot | R. Quere | R. Sommet | J.P. Viaud | J.P. Teyssier

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