论文信息 - Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) - 字舞流文

Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)

U. Mishra | J. Speck | I. Smorchkova | S. Rajan | C. Poblenz | P. Waltereit | B. Heying | P. Chin