THEORETICAL STUDIES ON THE EXTRINSIC DEFECTS OF MONTMORILLONITE IN SOFT ROCK

Using the first-principles methods, we study the formation energetics and charge doping properties of the extrinsic substitutional defects in montmorillonite. Especially, we choose Be, Mg, Ca, Fe, Cr, Mn, Cu, Zn as extrinsic defects to substitute for Al atoms. By systematically calculating the impurity formation energies and transition energy levels, we find that all Group II defects introduce the relative shallow transition energy levels in montmorillonite. Among them, MgAl has the shallowest transition energy level at 0.10 eV above the valence band maximum. The transition-elemental defects FeAl, CrAl, and MnAl are found to have relatively low formation energies, suggesting their easy formation in montmorillonite under natural surrounding conditions. Our calculations show that the defects CuAl and ZnAl have high formation energies, which exclude the possibility of their formation in montmorillonite.

[1]  B. Boizot,et al.  Native and artificial radiation-induced defects in montmorillonite. An EPR study , 2005 .

[2]  H. Monkhorst,et al.  "Special points for Brillouin-zone integrations"—a reply , 1977 .

[3]  G. Kresse,et al.  From ultrasoft pseudopotentials to the projector augmented-wave method , 1999 .

[4]  V. Dimov,et al.  Structural Model of Al13-Pillared Montmorillonite , 2000 .

[5]  Blöchl,et al.  Projector augmented-wave method. , 1994, Physical review. B, Condensed matter.

[6]  H. Monkhorst,et al.  SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS , 1976 .

[7]  F. Thomas,et al.  Theoretical study of the acid-base properties of the montmorillonite/electrolyte interface: influence of the surface heterogeneity and ionic strength on the potentiometric titration curves. , 2006, Journal of colloid and interface science.

[8]  Kresse,et al.  Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. , 1996, Physical review. B, Condensed matter.

[9]  A. Chatterjee,et al.  Electronic and structural properties of montmorillonite—a quantum chemical study , 1998 .

[10]  Su-Huai Wei,et al.  Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe , 2002 .

[11]  Xi Dai,et al.  Mean-field theory for the spin-ladder system , 1998 .

[12]  G. Kresse,et al.  Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set , 1996 .

[13]  W. Kohn,et al.  Self-Consistent Equations Including Exchange and Correlation Effects , 1965 .

[14]  P. Hohenberg,et al.  Inhomogeneous Electron Gas , 1964 .

[15]  B. Theng The Chemistry of Clay-Organic Reactions , 2024 .

[16]  V. Drits,et al.  The distribution of octahedral cations in the 2:1 layers of dioctahedral smectites studied by oblique-texture electron diffraction , 1984, Clay Minerals.