论文信息 - Lateral p-n junctions on GaAs(111)A substrates patterned with equilateral triangles - 字舞流文

Lateral p-n junctions on GaAs(111)A substrates patterned with equilateral triangles

S. Hiyamizu | I. Fujimoto | T. Takebe | T. Yamamoto | Teiji Yamamoto | Kikuo Kobayashi | M. Fujii | M. Shigeta | I. Fujimoto

[1] H. Katahama,et al. Si doping and MBE growth of GaAs on tilted (111)A substrates , 1991 .

[2] H. Katahama,et al. Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates , 1990 .

[3] H. Meier,et al. Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures , 1989 .

[4] Dieter Bimberg,et al. Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates , 1989 .