An antenna switch MMIC using E/D mode p-HEMT for GSM/DCS/PCS/WCDMA bands application
暂无分享,去创建一个
A monolithic antenna switch IC using enhancement and depletion (E/D) - mode AlGaAs/InGaAs pseudomorphic high electron mobility transistors (p-HEMTs) has been developed for GSM/DCS/PCS/WCDMA band digital mobile communication systems. This antenna switch MMIC achieves a low insertion loss and small chip size using a single pole double throw (SPDT) switch for GSM and single pole 4 throw (SP4T) switch for other band configurations, as well as internal logic circuits with an E/D mode p-HEMTs process. This MMIC achieves an insertion loss of 0.21dB at 915MHz and 0.53dB at 1785MHz. The isolation to the RX ports is more than 30 dB, and the input power at 0.1 dB compression is over 36 dBm at +2.7 V operation.
[1] S. Makioka,et al. Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems , 2001 .
[2] H. Ishiuchi,et al. High power heterojunction GaAs switch IC with P-1 dB of more than 38 dBm for GSM application , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).
[3] A. Nagayama,et al. Low-insertion-loss DP3T MMIC switch for dual-band cellular phones , 1999 .