40-Gbit/s ICs for future lightwave communications systems
暂无分享,去创建一个
[1] J. Akagi,et al. A 40 GHz D-type flip-flop using AlGaAs/GaAs HBTs , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.
[2] Eiichi Sano,et al. A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19-Gb/s decision circuit using a 0.2-/spl mu/m GaAs MESFET , 1995 .
[3] Y. Imai,et al. A DC-to-100-GHz InP HEMT 1:2 distributor IC using distributed amplification , 1996, IEEE Microwave and Guided Wave Letters.
[4] K. Kurishima,et al. Over-220-GHz-f/sub T/-and-f/sub max/ InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
[5] David W. Peckham,et al. Transmission of 8 20-Gb/s Channels over 232 km of Conventional Fiber , 1995 .
[6] Takashi Ono,et al. 2.6 terabit/s WDM transmission experiment using optical duobinary coding , 1996, Proceedings of European Conference on Optical Communication.
[7] Y. Imai,et al. A 40-Gbit/s optical repeater circuits using InAlAs/InGaAs HEMT digital IC chip set , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.
[8] Y. Matsuoka,et al. High-speed AlGaAs/GaAs HBTs and their applications to 40-Gbit/s-class ICs , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.
[9] T. Shibata,et al. A design technique for a 60 GHz-bandwidth distributed baseband amplifier IC module , 1994 .
[10] K. Hagimoto. Experimental 10 Gbit/s transmission systems and its IC technology , 1993, 15th Annual GaAs IC Symposium.
[11] Masataka Nakazawa,et al. 80 Gbit/s soliton data transmission over 500 km with unequal amplitude solitons for timing clock extraction , 1994 .
[12] E. Sano,et al. A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19 Gb/s decision circuit using 0.2 /spl mu/m GaAs MESFET , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.
[13] Eiichi Sano,et al. Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers , 1995 .
[14] Y. Imai,et al. A DC to 38-GHz distributed analog multiplier using InP HEMT's , 1994, IEEE Microwave and Guided Wave Letters.
[15] S. Yamaguchi,et al. New module structure using flip-chip technology for high-speed optical communication ICs , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.
[16] Yasuhiko Kuriyama,et al. Over 40 Gbit/s ultrahigh-speed multiplexer IC implemented with high f/sub max/ AlGaAs/GaAs HBTs , 1994 .
[17] Toshio Morioka,et al. Single channel 400 Gbit/s time-division-multiplexed transmission of 0.98 ps pulses over 40 km employing dispersion slope compensation , 1996 .
[18] Hiroshi Ito,et al. Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes , 1995, Proceedings of International Electron Devices Meeting.
[19] M. Yoneyama,et al. A super-dynamic flip-flop circuit for broadband applications up to 24 Gbit/s utilizing production-level 0.2-/spl mu/m GaAs MESFETs , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.
[20] Y. Ishii. Fabrication technologies of InP-based digital ICs and MMICs , 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
[21] K. Murata,et al. 25 Gbit/s selector module using 0.2 mu m GaAs MESFET technology , 1993 .
[22] Y. Imai,et al. DC-to-40-GHz GaAs MESFET Distributed Baseband Amplifier IC , 1995 .
[23] Y. Imai,et al. Novel distributed baseband amplifying techniques for 40-Gbit/s optical communication , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
[24] K. Runge,et al. 40 Gbit/s AlGaAs/GaAs HBT 4:1 multiplexer IC , 1995 .
[25] Y. Imai,et al. A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.
[26] Tomoyoshi Kataoka,et al. Limitations and challenges of single-carrier full 40-Gbit/s repeater system based on optical equalization and new circuit design , 1997, Proceedings of Optical Fiber Communication Conference (.
[27] K. Aufinger,et al. A 50 GHz implanted base silicon bipolar technology with 35 GHz static frequency divider , 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.
[28] Eiichi Sano,et al. 46 Gbit/s multiplexer and 40 Gbit/s demultiplexer IC modules using InAlAs/InGaAs/InP HEMTs , 1996 .
[30] Shigeru Kuwano,et al. 160-Gbit/s (4-ch x 40-Gbit/s Electrically Multiplexed Data) WDM Transmission over 320-km Dispersion-Shifted Fiber , 1996 .
[31] 0.1-/spl mu/m GaAs MESFET's fabricated using ion-implantation and photolithography , 1993, 15th Annual GaAs IC Symposium.
[32] Josef Bock,et al. 46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology , 1996 .