GaN/SiC heterojunction bipolar transistors

[1]  Oliver Ambacher,et al.  Growth and applications of Group III-nitrides , 1998 .

[2]  Hadis Morkoç,et al.  Emerging gallium nitride based devices , 1995, Proc. IEEE.

[3]  Tanakorn Osotchan,et al.  Electron mobilities in gallium, indium, and aluminum nitrides , 1994 .

[4]  Lester F. Eastman,et al.  Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .

[5]  Fischer,et al.  New approach in equilibrium theory for strained layer relaxation. , 1994, Physical review letters.

[6]  M. Grimsditch,et al.  The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals , 1997 .

[7]  D. Vanderbilt,et al.  Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997, cond-mat/9705105.

[8]  A. F. Wright.  Basal-plane stacking faults and polymorphism in AlN, GaN, and InN , 1997 .

[9]  L. Eastman,et al.  A MODFET process for micrometer scale strained layer islands , 1994 .

[10]  R. Davis,et al.  Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates , 1996 .

[11]  L. Eastman,et al.  Strained layer device epitaxy on patterned substrates [MODFETs] , 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

[12]  D. Vanderbilt,et al.  Polarization-based calculation of the dielectric tensor of polar crystals , 1997, cond-mat/9707252.

[13]  Smirnov,et al.  Molecular approach to the modeling of elasticity and piezoelectricity of SiC polytypes. , 1995, Physical review. B, Condensed matter.

[14]  J. Pankove,et al.  500/spl deg/C operation of a GaN/SiC heterojunction bipolar transistor , 1995, 1995 53rd Annual Device Research Conference Digest.

[15]  Temperature Effect on the Quality of A1N thin Films , 1999 .

[16]  Joan M. Redwing,et al.  Piezoelectric charge densities in AlGaN/GaN HFETs , 1997 .

[17]  P. Vogl,et al.  STABILITY AND BAND OFFSETS OF POLAR GAN/SIC(001) AND ALN/SIC(001) INTERFACES , 1997 .

[18]  Clas Persson,et al.  Relativistic band structure calculation of cubic and hexagonal SiC polytypes , 1997 .

[19]  Robert F. Davis,et al.  Pinholes, Dislocations and Strain Relaxation in InGaN , 1998 .

[20]  J. Pankove,et al.  High-temperature GaN/SiC heterojunction bipolar transistor with high gain , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[21]  K. Tsubouchi,et al.  Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films , 1985, IEEE Transactions on Sonics and Ultrasonics.