GaN Power Transistor Modeling for High-Speed Converter Circuit Design

A circuit simulator has been developed to design power losses of high-frequency power converters using GaN-based heterojunction field-effect transistors (GaN-HFETs). The simulator is based on a high-accuracy equivalent model of GaN-HFETs with peculiar device physics and high-speed loss calculation methods. The simulated power losses were consistent with measured results in dc-dc converters constructed by a GaN-HFET and a SiC Schottky diode with more than 93% accuracy. By utilizing the developed simulator, key requirements in heat-dissipation technologies, circuit parasitic inductances, and gate-drive technologies for next-generation converters are discussed.

[1]  Steven C. Binari,et al.  Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy , 2001 .

[2]  W. Saito,et al.  Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure , 2007, IEEE Transactions on Electron Devices.

[3]  K. Takao,et al.  Equivalent circuit model for GaN-HEMTs in a switching simulation , 2008, INTELEC 2008 - 2008 IEEE 30th International Telecommunications Energy Conference.

[4]  T. Saitoh,et al.  Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors , 2000 .

[5]  K. Kunihiro,et al.  Experimental evaluation of impact ionization coefficients in GaN , 1999, IEEE Electron Device Letters.

[6]  D. Ducatteau,et al.  Punch-through in short-channel AlGaN/GaN HFETs , 2006, IEEE Transactions on Electron Devices.

[7]  Frank Schwierz,et al.  An electron mobility model for wurtzite GaN , 2005 .

[8]  Kazuto Takao,et al.  Overall Circuit Loss Design Method for Integrated Power Converter , 2006 .

[9]  A. Osinsky,et al.  Electron trapping effects in C- and Fe-doped GaN and AlGaN , 2005 .

[10]  Hiromichi Ohashi.  Recent Power Devices Trend. , 2002 .

[11]  Yoshihiro Sato,et al.  GaN Power Transistors on Si Substrates for Switching Applications , 2010, Proceedings of the IEEE.

[12]  Hideki Hasegawa,et al.  Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors , 2003 .

[13]  T. Chow,et al.  730V, 34mΩ-cm2 lateral epilayer RESURF GaN MOSFET , 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

[14]  Lester F. Eastman,et al.  Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .