论文信息 - A study of the temperature sensitivity of GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers

A study of the temperature sensitivity of GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers

We have measured the temperature sensitivity, T/sub 0/, of GaAs-(Al,Ga)As, GRINSCH, multiple quantum-well (MQW) lasers with different numbers of quantum wells ranging from one to ten. Our data suggests that there is an optimum number of wells, namely five, where T/sub 0/ is highest. Using a temperature-dependent model based on drift-diffusion equations, we have systematically analyzed the temperature sensitivity of a MQW GaAs-(Al, Ga)As laser. The T/sub 0/ versus well-number behavior observed experimentally is verified, and the important temperature-dependent factors are identified. >

[1] C. Wyon,et al. Spectroscopic properties and fluorescence dynamics of Er/sup 3+/ and Yb/sup 3+/ in Y/sub 2/SiO/sub 5/ , 1992 .

[2] E. Schlosser,et al. Experimental determination of the influence of gain saturation on the temperature dependence of threshold current in short AlGaAs‐GaAs quantum‐well lasers , 1992 .

[3] S. P. McAlister,et al. A self-consistent two-dimensional model of quantum-well semiconductor lasers: optimization of a GRIN-SCH SQW laser structure , 1992 .

[4] R. Lang,et al. 1.3 μm InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy , 1983 .

[5] W. Tsang. Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double‐heterostructure and multiquantum well lasers , 1986 .

[6] Koichi Imanaka,et al. GaAs double quantum well laser diode with short‐period (AlGaAs)m(GaAs)n superlattice barriers , 1989 .

[7] Stephen D. Hersee,et al. Some characteristics of the GaAs/GaAlAs graded‐index separate‐confinement heterostructure quantum well laser structure , 1984 .