论文信息 - Analytical model for RESET operation of Phase Change Memory

Analytical model for RESET operation of Phase Change Memory

We present a novel analytical model for the RESET operation of Phase Change Memory (PCM) that explicitly describes the dependency of the programming current on various cell dimensions and material parameters. This model also explains, for the first time, the fundamental physics behind the inverse relationship between dynamic resistance(Rd) and the amplitude of the programming current.

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