High-Performance SIP Half-Bridge IPM Based on 35mΩ/1200V SiC Stack-Cascode

A SiC-based high-performance Intelligent Power Modules (IPM) was developed. It is a System In Package (SIP) module that consist of a half-bridge with driver. In the developed SIP IPM, the internal half-bridge is made up of UnitedSiC 35mΩ/1200V Stack-Cascode switches (UF3SC120035Z) which have low on-resistance, low gate charge, simple gate drive of VGS=0 or-5V to VGS=12V, excellent integral body diode and very low switching losses. The module operates with control voltage of 12-15V for both the low and high side switches, and a logic level input that can be 3.3V, 5V or 12V. We believe that this module will enable extremely efficient switching up to 250-400kHz, depending on topology, offering several hundred kHz even in hard-switched applications.