Extraction of low-frequency noise model of self-aligned AlGaAs/GaAs heterojunction bipolar transistor
暂无分享,去创建一个
The first quantitative extraction of low-frequency noise equivalent circuit model of self-aligned AlGaAs/GaAs heterojunction bipolar transistor has been performed. It is based on a generalized small signal circuit model including the base and emitter series resistance noise sources. The dominant noise sources are emitter-base current noise source and the resistance noise source. The emitter-collector current noise source is negligible.
[1] M. Tutt,et al. Low frequency noise characteristics of self-aligned AlGaAs/GaAs power heterojunction bipolar transistors , 1995 .
[2] James S. Harris,et al. Low-frequency noise properties of N-p-n AlGaAs/GaAs heterojunction bipolar transistors , 1992 .
[3] Bumman Kim,et al. 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz , 1996 .
[4] A. van der Ziel,et al. Location of 1/f noise sources in BJT's—II. Experiment , 1987, IEEE Transactions on Electron Devices.