Research on quantum efficiency of reflection-mode GaAs photocathode with thin emission layer

[1]  Benkang Chang,et al.  Comparative research on activation technique for GaAs photocathodes , 2012 .

[2]  Yijun Zhang,et al.  Photoemission characteristics of different-structure reflection-mode GaAs photocathodes , 2011 .

[3]  Yijun Zhang,et al.  Effect of different epitaxial structures on GaAs photoemission. , 2011, Applied optics.

[4]  Piero Pianetta,et al.  Photoemission study of Cs–NF3 activated GaAs(100) negative electron affinity photocathodes , 2008 .

[5]  F. Wise,et al.  Efficient temporal shaping of electron distributions for high-brightness photoemission electron guns , 2008 .

[6]  Benkang Chang,et al.  On-line measurement system of GaAs photocathodes and its applications , 2007, SPIE/OSA/IEEE Asia Communications and Photonics.

[7]  Benkang Chang,et al.  Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode. , 2007, Applied optics.

[8]  Ju Jia Zou,et al.  Efficient skeletonization based on generalized discrete local symmetries , 2006 .

[9]  Benkang Chang,et al.  Gradient-doping negative electron affinity GaAs photocathodes , 2006 .

[10]  Donald W. Feldman,et al.  Photocathodes for the energy recovery linacs , 2006 .

[11]  Xiaoqing Du,et al.  Angle-dependent XPS study of the mechanisms of “high–low temperature” activation of GaAs photocathode , 2005 .

[12]  Lei Liu,et al.  Automatic recording system of dynamic spectral response and its applications , 2003, SPIE Optics + Photonics.

[13]  Benkang Chang,et al.  Measurement of spectral response of photocathodes and its application , 2001, SPIE/OSA/IEEE Asia Communications and Photonics.

[14]  William E. Spicer,et al.  Modern theory and applications of photocathodes , 1993, Optics & Photonics.

[15]  D. G. Fisher,et al.  Negative electron affinity gallium arsenide photocathode grown by molecular beam epitaxy , 1984 .

[16]  Gregory H. Olsen,et al.  High‐performance GaAs photocathodes , 1977 .

[17]  S. J. Bass,et al.  GaAs reflection photocathodes grown by metal alkyl vapor phase epitaxy , 1976 .

[18]  B. Stocker.  AES and LEED study of the activation of GaAsCsO negative electron affinity surfaces , 1975 .

[19]  D. G. Fisher.  The effect of Cs-O activation temperature on the surface escape probability of NEA (In,Ga)As photocathodes , 1974 .

[20]  B. F. Williams,et al.  Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range , 1972 .

[21]  L. W. James,et al.  Operation of III‐V Semiconductor Photocathodes in the Semitransparent Mode , 1970 .

[22]  J. Moll,et al.  EFFECTS OF HEAT CLEANING ON THE PHOTOEMISSION PROPERTIES OF GaAs SURFACES , 1969 .