High performance floating-gate technology compatible antifuse
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An antifuse structure that is fully compatible with the standard floating-gate technology is presented. The antifuse consists of an oxide-nitride-oxide dielectric layer, sandwiched between polysilicon and N-well layers. The characteristics of the antifuse are investigated. The off-state resistance of the antifuse is larger than 10 GΩ. The programmed antifuses show linear ohmic characteristics and have a tight resistance distribution centred around 350 Ω. The time dependent dielectric breakdown measurements show that the extrapolated lifetime of the unprogrammed antifuse at 5.5 V is as long as 40 years, and the resistance change of post-program antifuses under the continuous reading mode test is lower than 5%.
[1] E. Hamdy,et al. Antifuse field programmable gate arrays , 1993, Proc. IEEE.
[2] Jae-Kyung Wee,et al. An antifuse EPROM circuitry scheme for field-programmable repair in DRAM , 2000, IEEE Journal of Solid-State Circuits.
[3] Kwyro Lee,et al. A 32-KB Standard CMOS Antifuse One-Time Programmable ROM Embedded in a 16-bit Microcontroller , 2006, IEEE Journal of Solid-State Circuits.