Picosecond MIXSEL for clocking applications
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Sandro M. Link | Ursula Keller | M. Golling | C. A. Zaugg | Mario Mangold | Bauke W. Tilma | Valentin J. Wittwer | V. Wittwer | U. Keller | M. Golling | C. Zaugg | M. Mangold | S. Link | B. Tilma
[1] H. Beere,et al. 4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation. , 2013, Optics Express.
[2] M. Hoffmann,et al. Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode. , 2008, Optics letters.
[3] Adrian H. Quarterman,et al. A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses , 2009 .
[4] U Keller,et al. Growth parameter optimization for fast quantum dot SESAMs. , 2008, Optics express.
[5] Ursula Keller,et al. Femtosecond high-power quantum dot vertical external cavity surface emitting laser. , 2011, Optics express.
[6] Francesca Parmigiani,et al. 26 Tbit s-1 line-rate super-channel transmission utilizing all-optical fast Fourier transform processing , 2011 .
[7] V. Wittwer,et al. High-power integrated ultrafast semiconductor disk laser: Multi-Watt 10 GHz pulse generation , 2012 .
[8] Jorg Hader,et al. 106 W continuous-wave output power from vertical-external-cavity surface-emitting laser , 2012 .
[9] Matthias Golling,et al. Pulse repetition rate scaling from 5 to 100 GHz with a high-power semiconductor disk laser. , 2014, Optics express.
[10] V. Wittwer,et al. High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power. , 2010, Optics express.
[11] M. Weyers,et al. Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser , 2011 .
[12] Frederick J. O'Donnell,et al. Optically sampled analog-to-digital converters , 2001 .
[13] E. Gini,et al. 50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power , 2006, IEEE Journal of Quantum Electronics.
[14] Matthias Golling,et al. Femtosecond pulses from a modelocked integrated external-cavity surface emitting laser (MIXSEL). , 2013, Optics express.
[15] Günter Steinmeyer,et al. Carrier-envelope offset phase control: A novel concept for absolute optical frequency measurement and ultrashort pulse generation , 1999 .
[16] Matthias Golling,et al. Experimentally verified pulse formation model for high-power femtosecond VECSELs , 2013 .
[17] M. Kuznetsov,et al. High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams , 1997, IEEE Photonics Technology Letters.
[18] Ursula Keller. Semiconductor saturable absorber mirror (SESAM) , 2016 .
[19] U. Keller,et al. Soliton-like pulse shaping mechanism in passively mode-locked surface-emitting semiconductor lasers , 2003, 2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666).
[20] Rüdiger Paschotta,et al. High power passively mode-locked semiconductor lasers , 2003 .
[21] V. Wittwer,et al. Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach. , 2012, Optics express.
[22] M. Golling,et al. Vertical integration of ultrafast semiconductor lasers , 2007, 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science.
[23] Stephan W Koch,et al. Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power , 2012 .