论文信息 - Strained silicon NMOS with nickel-silicide metal gate

Strained silicon NMOS with nickel-silicide metal gate

Strained Si NMOS transistors with Lgate down to 35 nm were fabricated using NiSi as a metal gate electrode material for the first time. Compared to poly gate devices, NiSi metal gate devices showed further enhanced performance with good control of short channel effects and no degradation in gate oxide integrity.

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