The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors
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Kuan‐Chang Chang | T. Tsai | Shin-Chuan Chiang | Yen‐Yu Huang | Wan-Ching Su | Tien-Yu Hsieh | Po-Yung Liao | Bo-Wei Chen | Hsi-Ming Chang | Chung-I Yang | T. Chang | Yu-Jia Chen