论文信息 - Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

Basal plane dislocations (BPDs) introduced into SiC epitaxial layers, 25 μm thick, by the combination of implantation and activation anneal are directly observed by ultraviolet photoluminescence (UVPL) imaging. BPD loops appear to originate at micron-sized or smaller areas at the surface. These loops expand by gliding along the basal plane in the offcut direction until the loops approach the substrate. The loops can glide perpendicular to the offcut direction by many millimeters.

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