Majority carrier accumulation in low-temperature-grown GaAs layer inserted into n-and p-type matrices
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A. Suvorova | P. Brunkov | N. Bert | V. Chaldyshev | V. Preobrazhenskii | M. Putyato | B. Semyagin | V.V. Chaldyshev | A.V. Chernigovskii | N.A. Bert | S.G. Konnikov | B.R. Semyagin