Electronics Below 10 nm

Publisher Summary The aim of this chapter is to review the prospects for the development and practical introduction of ultra small electron devices, including nanoscale field-effect transistors (FETs) and single-electron transistors (SETs), as well as new concepts for nanometer-scalable memory cells. Lithographically defined SETs can hardly be a panacea, since the critical dimension of such transistor for the room temperature operation should be below 1 nm. Due to the finite yield of molecular devices and their sensitivity to randomly charged impurities, this approach requires a substantial revision of integrated circuit architectures, ranging from defect-tolerant versions of memory matrices and number crunching processors to more radical solutions like hardware-implemented neuromorphic networks capable of advanced image recognition and more intelligent information processing tasks.

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