A novel model for MOSFET switching loss calculation

A novel model for low voltage (30 V) MOSFET switching loss calculation is presented in this paper, which takes into account the effect of parasitic Ls and other major parasitics in the loss calculation, giving more insight of the MOSFET switching process. Based on this model, high frequency topologies of 12 V VRM (voltage regulator module) can be conveniently analyzed and evaluated from the efficiency point of view.