Magnetoresistive RAM having multi-bit cell array configuration

The magnetic RAM having a multi-bit cell array structure is disclosed. Magnetic RAM according to an embodiment of the present invention is provided with the access transistor, the first through third resistance-variable elements, and first through third current supplying lines are formed in the substrate. The first through third resistance-variable elements are stacked between the bit line of the top floor and the access transistor, and electrically connected to each other. The applied first to third current lines are respectively disposed between the access transistor and the first through third resistance-variable elements. The first through third resistance-variable elements have a resistance equal to each other. Magnetic RAM according to an embodiment of the present invention has the advantage that can be the advantage of being able to easily write multi-bit data to the resistance variable elements, and reducing the effective surface area per bit, though using a plurality of resistance-variable elements.