Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties

Reactive‐ion molecular‐beam epitaxy has been used to grow epitaxial hexagonal‐structure α‐GaN on Al2O3(0001) and Al2O3(0112) substrates and metastable zinc‐blende‐structure β‐GaN on MgO(001) under the following conditions: growth temperature Ts=450–800 °C; incident N+2/Ga flux ratio JN+2/JGa=1–5; and N+2 kinetic energy EN+2=35–90 eV. The surface structure of the α‐GaN films was (1×1), with an ≊3% contraction in the in‐plane lattice constant for films grown on Al2O3(0001), while the β‐GaN films exhibited a 90°‐rotated two‐domain (4×1) reconstruction. Using a combination of in situ reflection high‐energy electron diffraction, double‐crystal x‐ray diffraction, and cross‐sectional transmission electron microscopy, the film/substrate epitaxial relationships were determined to be: (0001)GaN∥ (0001)Al2O3 with [2110]GaN∥[1100]Al2O3 and [1100]GaN∥[1210]Al2O3, (2110)GaN∥(0112)Al2O3 with [0001]GaN∥[0111]Al2O3 and [0110]GaN∥[2110]Al2O3, and (001)GaN∥(001)MgO with [001]GaN∥[001]MgO.Films with the lowest e...

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