Three-dimensional simulation of inverse narrow-channel effect
暂无分享,去创建一个
Based on a three-dimensional numerical analysis, it is shown that narrow-width MOSFETs of the BOX structure1 exhibit an `inverse? narrow-channel effect whereby their threshold voltages become lower and lower with decreasing channel width. The phenomenon is attributed to a pronounced enhancement of the channel edge region due to a crowding of the fringing field.