A sound barrier for silicon?
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[1] Edward J. Nowak,et al. Maintaining the benefits of CMOS scaling when scaling bogs down , 2002, IBM J. Res. Dev..
[2] R. Wallace,et al. Alternative Gate Dielectrics for Microelectronics , 2002 .
[3] G.E. Moore,et al. Cramming More Components Onto Integrated Circuits , 1998, Proceedings of the IEEE.
[4] J. Kavalieros,et al. High-/spl kappa//metal-gate stack and its MOSFET characteristics , 2004, IEEE Electron Device Letters.
[5] K. Kano. Semiconductor Devices , 1997 .
[6] H. Iwai,et al. 1.5 nm direct-tunneling gate oxide Si MOSFET's , 1996 .
[7] Ravi Mahajan. Emerging Directions For Packaging Technologies 62 Emerging Directions For Packaging Technologies , 2002 .
[8] S. Sze. Semiconductor Devices: Physics and Technology , 1985 .
[9] R. Chau. Benchmarking nanotechnology for high-performance and low-power logic transistor applications , 2004 .
[10] K. Steinhubl. Design of Ion-Implanted MOSFET'S with Very Small Physical Dimensions , 1974 .
[11] K. Kiuchi,et al. Extremely high transconductance (above 500 mS/mm) MOSFET with 2.5 nm gate oxide , 1985, 1985 International Electron Devices Meeting.
[12] B. Doyle. Poly Poly nitride Poly Poly Silicon Silicon Resist Silicon Silicon Silicon nitride Resist OxideOxide Oxide Oxide Silicon poly poly Oxide Oxide , 2002 .
[13] R. Schaller,et al. Technological innovation in the semiconductor industry: A case study of the International Technology Roadmap for Semiconductors (ITRS) , 2001, PICMET '01. Portland International Conference on Management of Engineering and Technology. Proceedings Vol.1: Book of Summaries (IEEE Cat. No.01CH37199).
[14] D. Muller,et al. The electronic structure at the atomic scale of ultrathin gate oxides , 1999, Nature.
[15] Robert H. Dennard,et al. Design of ion-implanted MOSFET's with very small physical dimensions , 2007 .