Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities
暂无分享,去创建一个
Eddy Simoen | C. Claeys | Marc Aoulaiche | Joao Antonio Martino | R. Carin | B. Cretu | S. D. dos Santos | Jean-Marc Routoure | J. A. Jiménez Tejada | V. Strobel | A. Luque Rodriguez
[1] Conductance modulation by single-electron trapping in sub-mMOSFETs , 1995 .
[2] M. J. Kirton,et al. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .
[3] E. Simoen,et al. Low-Frequency Noise Characterization of Strained Germanium pMOSFETs , 2011, IEEE Transactions on Electron Devices.
[4] T. Hiramoto,et al. Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Ultrathin Buried Oxide , 2010 .
[5] Eddy Simoen,et al. Explaining the amplitude of RTS noise in submicrometer MOSFETs , 1992 .
[6] E. Simoen,et al. Processing aspects in the low-frequency noise of nMOSFETs on strained-silicon substrates , 2006, IEEE Transactions on Electron Devices.
[7] E. Simoen,et al. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs , 2013, IEEE Transactions on Electron Devices.
[8] G. Ghibaudo,et al. Low-Frequency Noise Investigation and Noise Variability Analysis in High- $k$/Metal Gate 32-nm CMOS Transistors , 2011, IEEE Transactions on Electron Devices.
[9] Alexander A. Balandin,et al. Noise and Fluctuations Control in Electronic Devices , 2002 .
[10] En Xia Zhang,et al. Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs , 2010, IEEE Transactions on Nuclear Science.
[11] Ming-Jer Chen,et al. Probing a nonuniform two-dimensional electron gas with random telegraph signals , 2008 .
[12] A. Mercha,et al. Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs , 2004, IEEE Transactions on Electron Devices.
[13] A. Offenhäusser,et al. Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique , 2013 .
[14] Gerard Ghibaudo,et al. Low Frequency Noise in Multi-Gate SOI CMOS Devices , 2007 .
[15] R. Howard,et al. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise , 1984 .
[16] D. Fleetwood,et al. Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices , 1993 .
[17] Effect of single-electron interface trapping in decanano MOSFETs: A 3D atomistic simulation study , 2000 .
[18] G. Ghibaudo,et al. Impact of scaling down on low frequency noise in silicon MOS transistors , 1992 .
[19] Peng Zhang,et al. The impact of gate–image charge on RTS amplitudes in ultra-thin gate oxide n-MOSFETs , 2008 .
[20] Andrew R. Brown,et al. RTS amplitudes in decananometer MOSFETs: 3-D simulation study , 2003 .
[21] Kenji Natori,et al. Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO2 interface , 1990 .
[22] E. Simoen,et al. The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering , 2012, IEEE Electron Device Letters.
[23] Eddy Simoen,et al. On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors , 2005 .
[24] K. Otsuga,et al. Random Telegraph Signal in Flash Memory: Its Impact on Scaling of Multilevel Flash Memory Beyond the 90-nm Node , 2007, IEEE Journal of Solid-State Circuits.
[25] Gerard Ghibaudo,et al. Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors , 1991 .
[26] Cor Claeys,et al. Low frequency noise characterization in n-channel FinFETs , 2012 .
[27] M. Aoulaiche,et al. Dependence of Generation–Recombination Noise With Gate Voltage in FD SOI MOSFETs , 2012, IEEE Transactions on Electron Devices.
[28] E. Simoen,et al. Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors , 2007 .
[29] E. Simoen,et al. Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFETs , 1997, IEEE Electron Device Letters.
[30] Cor Claeys,et al. On the Variability of the Low-Frequency Noise in UTBOX SOI nMOSFETs , 2012 .
[31] G. Groeseneken,et al. Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM , 2012, IEEE Transactions on Electron Devices.
[32] M. Schulz,et al. Conductance modulation of submicrometer metal–oxide–semiconductor field‐effect transistors by single‐electron trapping , 1996 .
[33] Chih-Tang Sah,et al. Theory and experiments of low-frequency generation-recombination noise in MOS transistors , 1969 .
[34] A. Visconti,et al. Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories , 2009, IEEE Transactions on Electron Devices.
[35] A. Mercha,et al. Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack , 2007, IEEE Electron Device Letters.
[36] M. Haond,et al. Low frequency noise characterization of 0.25 μm Si CMOS transistors , 1997 .
[37] G. Ghibaudo,et al. Origin of the low-frequency noise in n-channel FinFETs , 2013 .
[38] A. Toriumi,et al. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's , 1994 .