An integrated 122GHz differential frequency doubler with 37GHz bandwidth in 130 nm SiGe BiCMOS technology

This paper describes an integrated frequency multiplier, implemented as a Gilbert cell based frequency doubler in a 130 nm SiGe BiCMOS technology. The circuit demonstrates a 3 dB bandwidth of 97–134GHz with peak output power of 1 dBm for 1 dBm input power. The fundamental suppression, measured at the single-ended output, is better than 21 dBc while the frequency doubler consumes 69mW from a 3.3V supply. The doubler is preceded by a differential amplifier functioning as an active balun to generate a differential signal for the Gilbert cell.

[1]  Yong-Zhong Xiong,et al.  A 124 to 132.5 GHz frequency quadrupler with 4.4 dBm output power in 0.13μm SiGe BiCMOS , 2015, ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC).

[2]  K. Schmalz,et al.  A 245 GHz transmitter in SiGe technology , 2012, 2012 IEEE Radio Frequency Integrated Circuits Symposium.

[3]  J. Bock,et al.  42 GHz active frequency doubler in SiGe bipolar technology , 2002, 2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002..

[4]  Yong Wang,et al.  A 9% power efficiency 121-to-137GHz phase-controlled push-push frequency quadrupler in 0.13μm SiGe BiCMOS , 2012, 2012 IEEE International Solid-State Circuits Conference.

[5]  Shuai Yuan,et al.  90–140 GHz frequency octupler in Si/SiGe BiCMOS using a novel bootstrapped doubler topology , 2014, 2014 9th European Microwave Integrated Circuit Conference.

[6]  Thomas Zwick,et al.  A low-cost miniature 120GHz SiP FMCW/CW radar sensor with software linearization , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

[7]  Juergen Hasch,et al.  A Study of SiGe HBT Signal Sources in the 220–330-GHz Range , 2013, IEEE Journal of Solid-State Circuits.

[8]  I. Sarkas,et al.  A Fundamental Frequency 120-GHz SiGe BiCMOS Distance Sensor With Integrated Antenna , 2012, IEEE Transactions on Microwave Theory and Techniques.

[9]  Gabriel M. Rebeiz,et al.  High-power high-efficiency SiGe Ku- and Ka-band balanced frequency doublers , 2005, IEEE Transactions on Microwave Theory and Techniques.

[10]  Dietmar Kissinger,et al.  Miniaturized 122 GHz system-on-chip radar sensor with on-chip antennas utilizing a novel antenna design approach , 2016, 2016 IEEE MTT-S International Microwave Symposium (IMS).

[11]  P. Chevalier,et al.  A D-band PLL covering the 81–82 GHz, 86–92 GHz and 162–164 GHz bands , 2010, 2010 IEEE Radio Frequency Integrated Circuits Symposium.

[12]  Yaoming Sun,et al.  A low-phase-noise 61 GHz push-push VCO with divider chain and buffer in SiGe BiCMOS for 122 GHz ISM applications , 2012, 2012 IEEE Radio Frequency Integrated Circuits Symposium.

[13]  Dietmar Kissinger,et al.  A 61 GHz frequency synthesizer in SiGe BiCMOS for 122 GHz FMCW radar , 2016, 2016 11th European Microwave Integrated Circuits Conference (EuMIC).

[14]  K. Aufinger,et al.  Differential signal source chips at 150 GHz and 220 GHz in SiGe bipolar technologies based on Gilbert-Cell frequency doublers , 2012, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[15]  Christophe Gaquiere,et al.  A 135–150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology , 2015, 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.

[16]  Yuji Yamamoto,et al.  A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps , 2010, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.