GaN based microwave power HEMTs

Recent progress of AlGaN/GaN based power HEMTs is presented. The mobility in these modulation doped structures is over 1200 cm 2 V -1 s -1 at 300 K with sheet densities of over 1×10 13 cm -2 . The current density is over I A/mm with gate-drain breakdown voltages up to 280 V. F t of over 52 GHz have been demonstrated. CW power density greater than 3 W/mm at 18 GHz has been achieved.