A Compact Model of Antiferroelectric Capacitor

In this paper, we develop a compact model of antiferroelectric (AFE) capacitors. AFE material, similar to the ferroelectric (FE) material, is a good candidate for non-volatile memory applications. Unlike FE materials, there are no good compact models that can describe the AFE materials for circuit simulation. In this study, we consider the AFE material as a collection of multiple crystal groups. For each group, the polarization may switch from zero to positive or negative polarization and vice versa depending on the electric field polarity. This switching is modeled by a local field-dependent switching rate, which has a statistical distribution among the groups. We implement this model in Verilog-A and run it on a commercial SPICE simulator to demonstrate this model’s capability to reproduce the published experimental data of the dependency of the AFE capacitor switching on the writing pulse width and voltage and the major and minor loops behavior are demonstrated.