Relationship between nature of metal-oxide contacts and resistive switching properties of copper oxide thin film based devices
暂无分享,去创建一个
[1] Sean Li,et al. Oxygen level: the dominant of resistive switching characteristics in cerium oxide thin films , 2012 .
[2] L. C. Olsen,et al. Explanation for low‐efficiency Cu2O Schottky‐barrier solar cells , 1979 .
[3] A. Boronin,et al. Investigation of oxygen states and reactivities on a nanostructured cupric oxide surface , 2011 .
[4] Wolf,et al. Ferroelectric Schottky diode. , 1994, Physical review letters.
[5] S. Rhee,et al. Effect of electrode material on the resistance switching of Cu2O film , 2007 .
[6] Miguel Melendez-Lira,et al. Effect of electrode type in the resistive switching behaviour of TiO2 thin films , 2013 .
[7] A. Sawa. Resistive switching in transition metal oxides , 2008 .
[8] Bodh Raj Mehta,et al. Optical and structural properties of nanocrystalline copper oxide thin films prepared by activated reactive evaporation , 2001 .
[9] Byung Joon Choi,et al. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .
[10] Tx,et al. Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface , 2002, cond-mat/0212464.
[11] C. Gerber,et al. Reproducible switching effect in thin oxide films for memory applications , 2000 .
[12] R. Ruoff,et al. Graphene oxide thin films for flexible nonvolatile memory applications. , 2010, Nano letters.
[13] B. Mehta,et al. Surface-modified CuO layer in size-stabilized single-phase Cu2O nanoparticles , 2001 .
[14] James A. Bain,et al. Electrode influence on the transport through SrRuO3∕Cr-doped SrZrO3/metal junctions , 2007 .
[15] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[16] A. Bid,et al. Temperature dependence of the resistance of metallic nanowires of diameter≥15nm: applicability of Bloch-Grüneisen theorem , 2006, cond-mat/0607674.
[17] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[18] Ah Rahm Lee,et al. Dependence of resistive switching behaviors on oxygen content of the Pt/TiO2−x/Pt matrix , 2011 .
[19] T. Barr. An ESCA study of the termination of the passivation of elemental metals , 1978 .
[20] F. Zeng,et al. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.
[21] Jung-Hyun Lee,et al. Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. , 2009, Nano letters.
[22] T. Maruyama. Copper Oxide Thin Films Prepared from Copper Dipivaloylmethanate and Oxygen by Chemical Vapor Deposition , 1998 .
[23] Byung Joon Choi,et al. Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films , 2007 .
[24] Jae Hyuck Jang,et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.
[25] Tang Ting-ao,et al. Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications , 2008 .
[26] Z. Ji,et al. Realization of forming-free ZnO-based resistive switching memory by controlling film thickness , 2010 .
[28] H. Hwang,et al. Resistance switching of copper doped MoOx films for nonvolatile memory applications , 2007 .
[29] J. Pierson,et al. Structural, surface morphological, and optical properties of nanocrystalline Cu2O and CuO films formed by RF magnetron sputtering: Oxygen partial pressure effect , 2012 .
[30] Jong-Wan Park,et al. Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications , 2006 .
[31] Young-soo Park,et al. Low‐Temperature‐Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High‐Density Non‐volatile Memory , 2009 .
[32] R. Waser,et al. Resistive switching of rose bengal devices: A molecular effect? , 2006 .
[33] I. Yoo,et al. Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications , 2005, IEEE Electron Device Letters.
[34] C. J. Kim,et al. Effect of top electrode on resistance switching of (Pr, Ca)MnO3 thin films , 2006 .
[35] E. L. Cook. Model for the Resistive‐Conductive Transition in Reversible Resistance‐Switching Solids , 1970 .
[36] A. Sawa,et al. Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface , 2004, cond-mat/0409657.
[37] V. Singh,et al. Resistive switching mechanism in delafossite-transition metal oxide (CuInO2–CuO) bilayer structure , 2010 .
[38] W. Lu,et al. High-density Crossbar Arrays Based on a Si Memristive System , 2008 .
[39] Oxygen ion drifted bipolar resistive switching behaviors in TiO2–Al electrode interfaces , 2010 .
[40] D. Ielmini,et al. Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.