论文信息 - High field transport characterization in nano MOSFETs using 10GHz capacitance measurements

High field transport characterization in nano MOSFETs using 10GHz capacitance measurements

10 GHz capacitance measurements are performed for the first time to reliably measure the inversion charge in downscaled devices. Effective mobility and average velocity are calculated. Obtained backscattering coefficients in both linear and saturation regimes clearly evidence the onset of non-stationnary transport but still far from the ballistic limit operation.

[1] Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs , 2010, IEEE Transactions on Electron Devices.

[2] Claire Fenouillet-Beranger,et al. Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices , 2009 .

[3] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.

[4] Stephane Monfray,et al. “Y function” method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction , 2013 .

[5] Mark S. Lundstrom. Elementary scattering theory of the Si MOSFET , 1997, IEEE Electron Device Letters.

[6] Hybrids Ieee Components. IEEE transactions on semiconductor manufacturing : a publication of the IEEE Components, Hybrids, and Manufacturing Technology Society, the IEEE Electron Devices Society, the IEEE Reliability Society, the IEEE Solid-State Circuits Council. , 1988 .

[7] M. Lundstrom,et al. Essential physics of carrier transport in nanoscale MOSFETs , 2002 .