Analysis of the kinetics for interface state generation following hole injection

Interface state generation is a major reliability issue for metal–oxide–semiconductor based devices. The generation can take place not only during stresses, but also after terminating the stress. Our attention is focused on analyzing the dynamic behavior of the generation after substrate hot hole injection. Despite previous efforts in this area, the generation kinetics is not fully understood, and there is insufficient information on the process limiting the generation rate. We start by showing that the normalized generation kinetics is insensitive to either the defect density or the processing condition. We then investigate the effect of various stressing parameters on the kinetics, including the oxide field strength during and posthole injection, the stress time, the energy and current of hot holes. This is followed by examining why the available models are inapplicable in our cases, including hydrogen transportation, trapped hole conversion, and coupling models. Finally, we propose both hydrogen emissi...

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