Temperature stability for silicon-based photonic band-gap structures

A method for minimizing thermal effects on silicon-based photonic band-gap (PBG) structures is demonstrated. The reflectance resonance positions of as-anodized one-dimensional porous silicon (PSi) PBG microcavities exhibit 3 nm redshifts when heated up to 100 °C, which significantly alters the light propagation properties of the structures. By carefully controlling the oxidation conditions of the PSi microcavities, it is possible to reduce the shift to less than 0.5 nm. High-resolution x-ray diffraction experiments directly link variations of the silicon strain during heating to shifts of the reflectance resonance. The pressure change induced by the proper oxidation level can compensate for the effect of the temperature change and, thus, stabilize the resonance position.

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