MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice
暂无分享,去创建一个
Guo-wei Wang | Ying-qiang Xu | R. Che | Z. Niu | Junkai Jiang | D. Jiang | Yong Li | Suning Cui | Chuan-jie Zhang | W. C. Chen | Chang Faran | Huang Li
[1] Manijeh Razeghi,et al. Background-limited long wavelength infrared InAs/InAs1−xSbx type-II superlattice-based photodetectors operating at 110 K , 2017 .
[2] Manijeh Razeghi,et al. InAs/InAs1−xSbx type-II superlattices for high performance long wavelength infrared detection , 2014 .
[3] Alexander Soibel,et al. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors , 2014, SPIE OPTO.
[4] Manijeh Razeghi,et al. High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection , 2014 .
[5] T. F. Boggess,et al. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice , 2012 .
[6] R. W. Graham,et al. High operating temperature mid-wavelength infrared HgCdTe photon trapping focal plane arrays , 2012, Defense + Commercial Sensing.
[7] E. Ring,et al. Infrared thermal imaging in medicine , 2012, Physiological measurement.
[8] Amy W. K. Liu,et al. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb , 2011 .
[9] Hongen Shen,et al. Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence , 2010 .
[10] S. P. Watkins,et al. Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm , 2009 .
[11] Markus Loose,et al. Teledyne Imaging Sensors: infrared imaging technologies for astronomy and civil space , 2008, Astronomical Telescopes + Instrumentation.
[12] G. Wicks,et al. nBn detector, an infrared detector with reduced dark current and higher operating temperature , 2006 .
[13] J. Fleissner,et al. Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range , 2006 .
[14] W. Yau,et al. A perspective on medical infrared imaging , 2005, Journal of medical engineering & technology.
[15] Y. Nakagawa,et al. AFM observation of polyethylene single crystals: selective handedness of screw dislocations in a chair type , 2003 .
[16] M. Meduňa,et al. Lateral composition modulation in (InAs) n /(AlAs) m short-period superlattices investigated by high-resolution x-ray scattering , 2002 .
[17] M. Bichler,et al. Investigation of In segregation in InAs/AlAs quantum-well structures , 2001 .
[18] A. Davoodi,et al. Characterization of screw dislocation-driven growth in nickel micro-nanostructure electrodeposition process by AFM , 2018 .
[19] Jin Fan,et al. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors , 2011 .