Integration of semiconductor laser amplifiers with sampled grating tunable lasers for WDM applications

A semiconductor laser amplifier is integrated with a sample grating distributed Bragg reflector (SGDBR) laser to act as an external modulator. The fabrication, characterization, and device characteristics of this integrated tunable transmitter are reported. The integrated tunable laser can have up to 75 nm of tuning range and more than 30 dB of side-mode suppression ratio (SMSR). The integrated amplifier can provide at most 8 dB of gain and more than 25 dB of contrast ratio for all the channels. Its RF modulation bandwidth can achieve 1.5 GHz, and the dynamic chirp is as good as a directly modulated laser. A simple model is proposed to explain the measured modulation responses and gain saturation is found to be the main cause of the resonant peaks in the dynamics.

[1]  Peter A. Andrekson,et al.  Novel technique for determining internal loss of individual semiconductor lasers , 1992 .

[2]  Uziel Koren,et al.  High frequency modulation of strained layer multiple quantum well optical amplifiers , 1991 .

[3]  R. P. Gnall,et al.  Continuously tunable 1.5μm multiple-quantum-well GaInAs/GaInAsP distributed-Bragg-reflector lasers , 1988 .

[4]  Uziel Koren,et al.  Broadly Tunable InGaAsP/InP Laser Based on a Vertical Coupler Filter with 57nm Tuning Range, , 1992 .

[5]  Dietrich Marcuse,et al.  Computer model of an injection laser amplifier , 1983 .

[6]  Ivan P. Kaminow,et al.  A Precompetitive Consortium on Wide-band All Optical Networks , 1993 .

[7]  A. Talneau,et al.  Sampled-grating DBR lasers with 80 addressable wavelengths over 33 nm for 2.5 Gbit/s WDM applications , 1996 .

[8]  D. Marcuse,et al.  Computer model of an injection laser with asymmetrical gain distribution , 1982 .

[9]  P.-J. Rigole,et al.  114-nm wavelength tuning range of a vertical grating assisted codirectional coupler laser with a super structure grating distributed Bragg reflector , 1995 .

[10]  L. Gillner,et al.  Modulation properties of a near travelling-wave semiconductor laser amplifier , 1992 .

[11]  Michael J. Adams,et al.  Analysis of semiconductor laser optical amplifiers , 1985 .

[12]  Yoshiaki Nakano,et al.  Influence of facet reflection on the performance of a DFB laser integrated with an optical amplifier/modulator , 1992 .

[13]  L. Coldren,et al.  Diode Lasers and Photonic Integrated Circuits , 1995 .

[14]  Yuzo Yoshikuni,et al.  Broad-range wavelength coverage (62.4nm) with superstructure-grating DBR laser , 1996 .

[15]  R. Alferness,et al.  Broadly tunable InGaAsP/InP laser based on a vertical coupler filter with 57‐nm tuning range , 1992 .

[16]  P. Green Fiber Optic Networks , 1992 .

[17]  T. Tanbun-Ek,et al.  Optical demultiplexing at 6 Gb/s using a semiconductor laser amplifier as an optical gate , 1991, IEEE Photonics Technology Letters.

[18]  B. Glance,et al.  Fast optical packet switching based on WDM , 1992, IEEE Photonics Technology Letters.

[19]  N. Dutta,et al.  Semiconductor Lasers , 1993 .

[20]  H. Ishii,et al.  Over 1100 nm wavelength tuning in superstructure grating (SSG) DBR lasers , 1993 .

[21]  Yuzo Yoshikuni,et al.  A wavelength-tunable duplex integrated light source for fast wavelength switching , 1996 .

[22]  S. L. Danielsen,et al.  All-optical wavelength conversion by semiconductor optical amplifiers , 1996 .

[23]  Dynamic responses of widely tunable sampled grating DBR lasers , 1996, IEEE Photonics Technology Letters.

[24]  Continuous-wave operation of sampled grating tunable lasers with 10 mwatt output power, >60 nm tuning, and monotonic tuning characteristics , 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).