NbOx based oscillation neuron for neuromorphic computing
暂无分享,去创建一个
[1] J. Sakai,et al. High-efficiency voltage oscillation in VO2 planer-type junctions with infinite negative differential resistance , 2008 .
[2] Wei Yang Lu,et al. Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.
[3] Hyunsang Hwang,et al. Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications , 2011, Nanotechnology.
[4] R Stanley Williams,et al. Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices , 2012, Nanotechnology.
[5] Xiaonan Chen,et al. Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches , 2013, IEEE Electron Device Letters.
[6] Shimeng Yu,et al. Synaptic electronics: materials, devices and applications , 2013, Nanotechnology.
[7] M. Pickett,et al. A scalable neuristor built with Mott memristors. , 2013, Nature materials.
[9] Sannian Song,et al. Reduced Threshold Current in NbO2 Selector by Engineering Device Structure , 2014, IEEE Electron Device Letters.
[10] Shimeng Yu,et al. Fully parallel write/read in resistive synaptic array for accelerating on-chip learning , 2015, Nanotechnology.
[11] E. Vianello,et al. HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks , 2015, IEEE Transactions on Electron Devices.
[12] Robert Elliman,et al. High-endurance megahertz electrical self-oscillation in Ti/NbO x bilayer structures , 2015 .
[13] R. Elliman,et al. Threshold current reduction for the metal–insulator transition in NbO2−x-selector devices: the effect of ReRAM integration , 2015 .
[14] Farnood Merrikh-Bayat,et al. Training and operation of an integrated neuromorphic network based on metal-oxide memristors , 2014, Nature.
[15] Shimeng Yu,et al. Parallel Architecture With Resistive Crosspoint Array for Dictionary Learning Acceleration , 2015, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.
[16] Rainer Waser,et al. Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model , 2016 .
[17] Alessandro Calderoni,et al. Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM , 2016, IEEE Transactions on Electron Devices.