论文信息 - X‐Ray Diffraction Investigation of Si Crystals with Randomly Distributed Microdefects by the Inclination Method

X‐Ray Diffraction Investigation of Si Crystals with Randomly Distributed Microdefects by the Inclination Method

The results of systematic investigations of Si crystals having a random distribution of small (10 to 100 nm) structure inhomogeneities (microdefects) by measuring the dependence of the integral Laue reflection coefficient in the symmetrical case on the inclination angle Rh(α) by the inclination method are presented. The errors of the method of precise determination of the parameters of the defect structure are estimated. Problems of the influence of different factors associated with the nonideality of the experiment on the dependence Rh(α), the question about the optimal choice of experimental conditions, and the limits of the possibilities of determining defect structure parameters are considered. [Russian Text Ignore]

F. Chukhovskiǐ | S. N. Voronkov | P. V. Lomovtsev | S. P. Darbinyan

[1] P. Becker,et al. On the statistical dynamical theory of diffraction: application to silicon , 1988 .

[2] P. Zaumseil,et al. Triple Crystal Diffractometer Investigations of Imperfections in Silicon Crystals with Laue‐Case Diffraction , 1982 .

[3] N. Olekhnovich,et al. Dynamical Oscillations of X‐Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation Crystals , 1982 .

[4] N. Kato,et al. Statistical dynamical theory of crystal diffraction. I. General formulation , 1980 .

[5] K. Kohra,et al. Separate measurements of dynamical and kinematical X‐ray diffractions from silicon crystals with a triple crystal diffractometer , 1979 .

[6] P. Petrashen,et al. A general dynamical theory of the X‐ray Laue diffraction from a homogeneously bent crystal , 1977 .

[7] N. Kato,et al. Absolute Measurement of Structure Factors of Si Single Crystal by Means of X-Ray Pendellösung Fringes , 1965 .

[8] N. Olekhnovich,et al. Effect of dislocation density on integrated intensity of X-ray scattering by silicon crystals in Laue geometry , 1983 .

[9] M. Hart,et al. An accurate absolute scattering factor for silicon , 1969 .