A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C

This paper presents a 79GHz variable gain low-noise amplifier (LNA) and power amplifier (PA), both implemented in 28nm CMOS, and measured at temperatures from 27°C to 125°C. The 4-gain steps LNA and the 17dB gain PA are based on a multistage common source neutralized push-pull topology. The LNA achieves a gain of 23.8dB and a noise figure (NF) of 4.9dB, and the PA achieves a maximum power added efficiency (PAE) of 13.8% and a saturated output power (Psat) of 12.3dBm. At 125°C both the LNA and the PA are functional with NF <; 7dB and Psat >11dBm. This paper demonstrates the feasibility of using scaled CMOS technology (28nm) for automotive radars.

[1]  P. Chevalier,et al.  A Low-Voltage SiGe BiCMOS 77-GHz Automotive Radar Chipset , 2008, IEEE Transactions on Microwave Theory and Techniques.

[2]  Kun-Hin To,et al.  A 76-81GHz transmitter with 10dBm output power at 125 °C for automotive radar in 65nm bulk CMOS , 2011, 2011 IEEE Custom Integrated Circuits Conference (CICC).

[3]  Masaru Sato,et al.  A millimeter-wave CMOS low noise amplifier using transformer neutralization techniques , 2011, Asia-Pacific Microwave Conference 2011.

[4]  Jri Lee,et al.  A fully integrated 77GHz FMCW radar system in 65nm CMOS , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

[5]  P. Asbeck,et al.  $Q$ -Band and $W$ -Band Power Amplifiers in 45-nm CMOS SOI , 2012, IEEE Transactions on Microwave Theory and Techniques.

[6]  D. Belot,et al.  Design for millimeter-wave applications in silicon technologies , 2007, ESSCIRC 2007 - 33rd European Solid-State Circuits Conference.

[7]  J. Buckwalter,et al.  $Q$ -Band and $W$ -Band Power Amplifiers in 45-nm CMOS SOI , 2012 .