论文信息 - Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2 - 字舞流文

Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2

Qiming Li | D. Friedman | D. Kuciauskas | J. Cederberg | Sangmok Han | M. J. Romero | M. Carroll | D. Leonhardt | J. Sheng