3D Process Simulation at IEMN/ISEN

This paper addresses the current fields of interest at IEMN/ISSN concerning 3D process simulation. The emphasis is on the diffusion and oxidation steps and the associated issue of 3D mesh generation. For each step, the achievements are presented with special attention to the numerical aspects. In particular, the principles underlying local remeshing are discussed.

[1]  S. Solmi,et al.  Diffusion of boron in silicon during post-implantation annealing , 1991 .

[2]  P. Griffin,et al.  Point defects and dopant diffusion in silicon , 1989 .

[3]  Siegfried Selberherr,et al.  Simulation of Semiconductor Devices and Processes , 1994, Springer Vienna.

[4]  Vincent Senez,et al.  Mesh Generation for 3D Process Simulation and the Moving Boundary Problem , 1995 .

[5]  M. E. Law,et al.  Challenges to Achieving Accurate Three-Dimensional Process Simulation , 1993 .

[6]  Jun Ueda,et al.  A fast three-dimensional process simulator OPUS/3D with access to two-dimensional simulation results , 1990, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[7]  Emmanuel Dubois,et al.  Adaptive mesh refinement for multilayer process simulation using the finite element method , 1992, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[8]  D. Collard,et al.  Simulation of advanced field isolation using calibrated viscoelastic stress analysis , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[9]  R. Fair,et al.  A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect , 1977 .

[10]  Nancy Hitschfeld.  Grid generation for three-dimensional non-rectangular semiconductor devices , 1993 .

[11]  R.W. Dutton,et al.  VLSI Process modeling—SUPREM III , 1983, IEEE Transactions on Electron Devices.

[12]  P. L. George,et al.  Automatic Mesh Generation: Application to Finite Element Methods , 1992 .

[13]  C. Hill,et al.  Modelling Diffusion in and From Polysilicon Layers , 1990 .

[14]  Mark E. Law,et al.  Automatic grid refinement and higher order flux discretization for diffusion modeling , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[15]  S. Odanaka,et al.  Three-dimensional numerical simulation of local oxidation of silicon , 1991 .