Spectroscopy of hot carriers in semiconductors

Abstract We review the use of optical spectroscopy for the study of hot carrier relaxation in semiconductors. Results for direct-gap semiconductors, especially GaAs, and also recent studies of hot carriers in quantum wells are emphasized. Steady-state and time-resolved experiments are reviewed. These include both hot luminescence and absorption measurements. We also discuss theoretical aspects of hot carrier relaxation, including electron-electron and electron-phonon scattering, screening of the electron-phonon interaction, and the role of nonequilibrium phonons.

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