Spectroscopy of hot carriers in semiconductors
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[1] T. C. Damen,et al. Multiple-Phonon Resonant Raman Scattering in CdS , 1969 .
[2] J. Shah. Photoexcited hot electrons and excitons in CdSe at 2 °K , 1974 .
[3] J. Shannon. Hot-electron camel transistor , 1979 .
[4] W. Fawcett,et al. Monte Carlo determination of electron transport properties in gallium arsenide , 1970 .
[5] G. Bauer,et al. Low-Temperature Non-Ohmic Galvanomagnetic Effects in Degenerate n-Type InAs , 1972 .
[6] J. Shah,et al. Dynamics of hot carrier cooling in photo-excited GaAs , 1979 .
[7] A. Smirl,et al. PICOSECOND OPTICALLY INDUCED ANISOTROPIC STATE FILLING IN SEMICONDUCTORS , 1982 .
[8] T. B. Watkins,et al. The Possibility of Negative Resistance Effects in Semiconductors , 1961 .
[9] E. Ippen,et al. Picosecond time resolved reflectivity of direct gap semiconductors , 1978 .
[10] A. Cornet,et al. Cooling of hot electron-hole plasmas in the presence of screened electron-phonon interactions , 1981 .
[11] P. J. Price,et al. Two-dimensional electron transport in semiconductor layers. I. Phonon scattering , 1981 .
[12] N. Holonyak,et al. Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å) , 1978 .
[13] J. Shah,et al. Hot‐carrier relaxation in photoexcited In0.53Ga0.47As , 1980 .
[14] A. Gill,et al. High current gain in monolithic hot-electron transistors , 1981 .
[15] A. Cornet,et al. Cooling of high density electron-hole plasma , 1982 .
[16] E. Kane,et al. Energy band structure in p-type germanium and silicon , 1956 .
[17] R. Leite,et al. Non equilibrium phonon distribution and electron-phonon coupling in semiconductors , 1973 .
[18] W. Bonner,et al. Nonlinear optical studies of picosecond relaxation times of electrons in n‐GaAs and n‐GaSb , 1983 .
[19] D. Pines. A COLLECTIVE DESCRIPTION OF ELECTRON INTERACTIONS: IV. ELECTRON INTERACTION IN METALS , 1953 .
[20] J. Shah,et al. Radiative Recombination from Photoexcited Hot Carriers in GaAs , 1969 .
[21] A. Mooradian,et al. First order Raman effect in III–V compounds , 1966 .
[22] A. Gossard,et al. Observation of folded acoustic phonons in a semiconductor superlattice , 1980 .
[23] G. Mahler,et al. Non-equilibrium plasma: Theory and experiment , 1985 .
[24] Ellen J. Yoffa,et al. Dynamics of dense laser-induced plasmas , 1980 .
[25] H. Sakaki,et al. Hot photoluminescence of GaAs-AlGaAs multiple quantum well structures under high excitation by a single shot of 30 ps, 532 nm laser , 1985 .
[26] A. Mooradian,et al. Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAs , 1966 .
[27] J. Ziman. Principles of the Theory of Solids , 1965 .
[28] D. Linde,et al. Picosecond correlation effects in the hot luminescence of GaAs , 1981 .
[29] R. Stratton. The influence of interelectronic collisions on conduction and breakdown in polar crystals , 1958, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[30] Richard L. Fork,et al. Picosecond dynamics of highly excited multiquantum well structures , 1982 .
[31] W. Wiegmann,et al. Low-temperature absorption spectrum in GaAs in the presence of optical pumping , 1977 .
[32] P. Yu,et al. Generation of nonequilibrium optical phonons in GaAs and their application in studying intervalley electron-phonon scattering , 1984 .
[33] D. Auston,et al. Picosecond Ellipsometry of Transient Electron-Hole Plasmas in Germanium , 1974 .
[34] James R. Chelikowsky,et al. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors , 1976 .
[35] Manuel Cardona,et al. Light Scattering in Solids VII , 1982 .
[36] Frederick Seitz,et al. On the Theory of Electron Multiplication in Crystals , 1949 .
[37] J. G. Ruch,et al. Electron dynamics in short channel field-effect transistors , 1972 .
[38] N. Watanabe,et al. Fully ion-implanted GaAs ICs using normally-off JFETs , 1981 .
[39] R. Leite,et al. Hot electron and hot phonon contributions to radiative emission spectra in CdS at high excitation intensities , 1975 .
[40] M. Shur,et al. Ballistic transport in semiconductor at low temperatures for low-power high-speed logic , 1979, IEEE Transactions on Electron Devices.
[41] Klein,et al. Folded acoustic and quantized optic phonons in (GaAl)As superlattices. , 1985, Physical review. B, Condensed matter.
[42] J. Gersten,et al. ELS studies of quantized accumulation layers on ZnO surfaces , 1980 .
[43] P. Kocevar,et al. Electronic power transfer in pulsed laser excitation of polar semiconductors , 1983 .
[44] E. Imhoff,et al. Hot photoluminescence in beryllium-doped gallium arsenide , 1985 .
[45] H. Ehrenreich. Screening effects in polar semiconductors , 1959 .
[46] J. Kuhl,et al. Short pulse physics of quantum well structures , 1985 .
[47] R. F. Leheny,et al. Dynamics of Photoexcited GaAs Band-Edge Absorption with Subpicosecond Resolution , 1979 .
[48] J. Shah,et al. Photoexcited hot LO phonons in GaAs , 1970 .
[49] P. J. Price. Electron transport in polar heterolayers , 1982 .
[50] J. C. Matter,et al. Nonlinear Absorption and Ultrashort Carrier Relaxation Times in Germanium under Irradiation by Picosecond Pulses , 1974 .
[51] D. J. Erskine,et al. Femtosecond Relaxation of Photoexcited Nonequilibrium Carriers in Al x Ga 1 − x As , 1983 .
[52] H. Fröhlich,et al. Notes on the Theory of Dielectric Breakdown in Ionic Crystals , 1950 .
[53] P. K. Basu,et al. Energy loss of two‐dimensional electron gas in GaAs‐AlGaAs multiple quantum wells by screened electron‐polar optic‐phonon interaction , 1985 .
[54] D. Howarth,et al. The theory of electronic conduction in polar semi-conductors , 1953, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[55] S. Hiyamizu,et al. Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE , 1983 .
[56] Hiroshi Saito,et al. Luminescence of High Density Electron-Hole Plasma in GaAs , 1980 .
[57] G. Dolling,et al. Crystal Dynamics of Gallium Arsenide , 1963 .
[58] Levi,et al. Injected-hot-electron transport in GaAs. , 1985, Physical review letters.
[59] Á. R. Vasconcellos,et al. Evolution of carrier and optical phonon distribution in photoexcited semiconductors , 1979 .
[60] E. Conwell. High field transport in semiconductors , 1967 .
[61] M. Combescot,et al. ELECTRON-HOLE PLASMA GENERATION AND EVOLUTION IN SEMICONDUCTORS , 1985 .
[62] J. Gordon,et al. Generation of optical pulses as short as 27 femtoseconds directly from a laser balancing self-phase modulation, group-velocity dispersion, saturable absorption, and saturable gain. , 1985, Optics letters.
[63] Robert A. Taylor,et al. Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures , 1984 .
[64] C. Hilsum,et al. Transferred electron amplifiers and oscillators , 1962, IRE Transactions on Electron Devices.
[65] L. Nikitin,et al. Hot electron photoluminescence in GaAs crystals , 1981 .
[66] E. Ippen,et al. Picosecond spectroscopy of semiconductors , 1978 .
[67] D. Linde,et al. Raman Scattering from Nonequilibrium LO Phonons with Picosecond Resolution , 1980 .
[68] K. L. Kliewer,et al. Optical Modes of Vibration in an Ionic Crystal Slab , 1965 .
[69] A. Smirl,et al. Theory of degenerate four-wave mixing in picosecond excitation-probe experiments , 1983 .
[70] W. Harrison. Scattering of Electrons by Lattice Vibrations in Nonpolar Crystals , 1956 .
[71] D. Linde,et al. Direct Measurement of Hot-Electron Relaxation by Picosecond Spectroscopy , 1979 .
[72] Joseph L. Birman,et al. Electronic States and Optical Transitions in Solids , 1976 .
[73] Shah,et al. Energy-loss rates for hot electrons and holes in GaAs quantum wells. , 1985, Physical review letters.
[74] N. Holonyak,et al. Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures , 1980 .
[75] R. Dingle,et al. Confined carrier quantum states in ultrathin semiconductor heterostructures , 1975 .
[76] J. Shah,et al. Carrier energy relaxation in In0.53Ga0.47As determined from picosecond luminescence studies , 1984 .
[77] J. Shah,et al. Hot electron relaxation in In0.53Ga0.47As , 1985 .
[78] M. Nathan,et al. Importance of boundary conditions to conduction in short samples , 1981, IEEE Transactions on Electron Devices.
[79] R. Vacher,et al. Light scattering from vibrational modes in Ga As − Ga 1 − x Al x As superlattices and related alloys , 1983 .
[80] G. Bauer. Experimental aspects of hot electron distribution functions , 1978 .
[81] Chinlon Lin,et al. Pump wavelength dependence of hot electron temperature in GaAs , 1976 .
[82] R. Ulbrich. Energy Relaxation of Photoexcited Hot Electrons in GaAs , 1973 .
[83] John J. Quinn,et al. Range of Excited Electrons in Metals , 1962 .
[84] Miles V. Klein,et al. Raman scattering in superlattices: Anisotropy of polar phonons , 1980 .
[85] G. Dresselhaus. Spin-Orbit Coupling Effects in Zinc Blende Structures , 1955 .
[86] C. Weisbuch,et al. Picosecond dynamics of hot carrier relaxation in highly excited multi-quantum well structures , 1983 .
[87] R. Parmenter. Symmetry Properties of the Energy Bands of the Zinc Blende Structure , 1955 .
[88] P. J. Price. Two‐dimensional electron transport in semiconductor layers II: Screening , 1981 .
[89] R. Leite. Radiative spectra from hot photocarriers , 1978 .
[90] Thomas,et al. Direct observation of ballistic transport in GaAs. , 1985, Physical review letters.
[91] C. M. Wolfe,et al. Split-Off Valence-Band Parameters for GaAs from Stress-Modulated Magnetoreflectivity , 1970 .
[92] H. Mahr,et al. An optical up-conversion light gate with picosecond resolution , 1975 .
[93] V. Driel. Influence of hot phonons on energy relaxation of high-density carriers in germanium , 1979 .
[94] B. Greene,et al. Generation of optical pulses shorter than 0.1 psec by colliding pulse mode-locking , 1981, IEEE Journal of Quantum Electronics.
[95] O. Hildebrand,et al. Thermalization of the Electron—Hole Plasma in GaAs. , 1978 .
[96] Ellen J. Yoffa,et al. Screening of hot-carrier relaxation in highly photoexcited semiconductors , 1981 .
[97] C. Tang,et al. Picosecond relaxation of hot carriers in highly photoexcited bulk GaAs and GaAs-AlGaAs multiple quantum wells , 1984 .
[98] D. Auston,et al. Parametric Coupling in an Optically Excited Plasma in Ge , 1975 .
[99] A. Chaplik,et al. Two-dimensional plasmons (2DP) and acoustic waves in crystals , 1980 .
[100] W. Wiegmann,et al. Hot electron spectroscopy , 1984 .
[101] F. Stern,et al. Electronic properties of two-dimensional systems , 1982 .
[102] R. Lassnig,et al. Polar optical interface phonons and Fröhlich interaction in double heterostructures , 1984 .
[103] Tsang,et al. Sub-picosecond time-resolved Raman spectroscopy of LO phonons in GaAs. , 1985, Physical review letters.
[104] Yia-Chung Chang,et al. Theory of phonon dispersion relations in semiconductor superlattices , 1984 .
[105] J. Oudar,et al. Transient anisotropy effects in the absorption saturation of GaAs , 1985 .
[106] Y. Inuishi,et al. Experimental and theoretical determination of hot electron distribution in GaAs and related mixed crystals , 1978 .
[107] A. Gossard,et al. Electric field induced heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructures , 1983 .
[108] Robert R. Alfano,et al. Slowed picosecond kinetics of hot photogenerated carriers in GaAs , 1982 .
[109] Arnold Migus,et al. Femtosecond orientational relaxation of photoexcited carriers in GaAs , 1984 .
[110] Brian S. Wherrett,et al. Picosecond transient orientational and concentration gratings in germanium , 1983 .
[111] Ploog,et al. Interface vibrational modes in GaAs-AlAs superlattices. , 1985, Physical review letters.
[112] P. G. Klemens,et al. Anharmonic Decay of Optical Phonons , 1966 .
[113] A. Taylor,et al. Femtosecond studies of intraband relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structures , 1984 .
[114] J. Shah,et al. Absorption spectrum of optically pumped GaAs; Band filling and hot electron effects , 1978 .
[115] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[116] R. Dingle,et al. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices , 1978 .
[117] Yang,et al. Hot electron relaxation in GaAs quantum wells. , 1985, Physical review letters.
[118] R. Ulbrich. Low density photoexcitation phenomena in semiconductors: Aspects of theory and experiment , 1978 .
[119] J. Shah. Hot electrons and phonons under high intensity photoexcitation of semiconductors , 1978 .
[120] J. Shah. Distribution function of photoexcited carriers in highly excited GaAs , 1974 .
[121] Marshall I. Nathan,et al. Tunneling hot‐electron transfer amplifier: A hot‐electron GaAs device with current gain , 1985 .
[122] Fred H. Pollak,et al. Raman scattering in alloy semiconductors: Spatial correlation model , 1984 .
[123] D. E. Aspnes,et al. GaAs lower conduction-band minima: Ordering and properties , 1976 .
[124] R. Leite,et al. Dependence of hot carriers temperature on lattice temperature in CdS , 1973 .
[125] K. Hess. Impurity and phonon scattering in layered structures , 1979 .
[126] A. Taylor,et al. Equal‐pulse correlation technique for measuring femtosecond excited state relaxation times , 1983 .
[127] A. Gossard,et al. Hot electrons in modulation-doped GaAs-AlGaAs heterostructures , 1984 .
[128] A. Gossard,et al. Optical Vibrational Modes and Electron-Phonon Interaction in GaAs Quantum Wells , 1984 .
[129] K. Ploog,et al. Luminescence from hot electrons relaxing by LO phonon emission in p-GaAs and GaAs doping superlattices , 1985 .
[130] R. A. Logan,et al. Picosecond nonequilibrium carrier transport in GaAs , 1981 .
[131] D. Ferry. Scattering by polar-optical phonons in a quasi-two-dimensional semiconductor☆ , 1978 .
[132] E. Kane,et al. Band structure of indium antimonide , 1957 .
[133] C. Weisbuch. Photocarrier thermalization by laser excitation spectroscopy , 1978 .
[134] J. Gersten. Theory of surface plasmarons. II. The effect of a finite thickness of the accumulation layer , 1980 .
[135] Ploog,et al. Resonance Raman scattering by confined LO and TO phonons in GaAs-AlAs superlattices. , 1985, Physical review letters.
[136] B. P. Zakharchenya,et al. REVIEWS OF TOPICAL PROBLEMS: Spectrum and polarization of hot-electron photoluminescence in semiconductors , 1982 .