The case for Auger recombination in In1−xGaxAsyP1−y

The possible Auger recombination mechanisms in direct‐gap semiconductors are investigated. These include band‐to‐band processes, phonon‐assisted processes, and Auger recombination via shallow traps. The band‐to‐band Auger rates are calculated including Fermi statistics, nonparabolic bands, and screening effects both for n‐type and p‐type semiconductors. The nonparabolicity is calculated using the Kane‐band model. The band‐to‐band Auger processes are characterized by a strong temperature dependence, the Auger rate decreasing rapidly with decreasing temperature. The phonon‐assisted and the trap processes do not exhibit such a strong temperature dependence. This is because the additional momentum conservation for the four‐particle states in band‐to‐band processes gives rise to a ’’threshold energy’’ for the process. For the same reason, the band‐to‐band Auger rate decreases rapidly with increasing band gap. In large‐band‐gap semiconductors the weakly temperature‐dependent phonon‐assisted processes are expect...

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