Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

Resistive switching mechanism of Ti/HfOx/Pt memory devices was studied using X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy images. Spatial distributions of valence of Hf demonstrated that the fraction of Hf4+ increased from Ti/HfOx interface to HfOx/Pt interface in high resistance state (HRS), but it maintained a constant level in low resistance state (LRS). Rupture of oxygen vacancies formed conducting paths occurred near the HfOx/Pt interface. The cross sectional images of active switching region also varied with HRS and LRS. A dynamic model of interface processes was proposed to interpret interfaces migration of oxygen vacancies near both the top and bottom electrodes.

[1]  C. N. Lau,et al.  The mechanism of electroforming of metal oxide memristive switches , 2009, Nanotechnology.

[2]  T. Schroeder,et al.  Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures , 2012 .

[3]  H. Grampeix,et al.  Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material , 2012 .

[4]  Jen‐Sue Chen,et al.  Schottky barrier mediated single-polarity resistive switching in Pt layer-included TiO(x) memory device. , 2011, ACS applied materials & interfaces.

[5]  Jen‐Sue Chen,et al.  Resistive switching behavior and multiple transmittance states in solution-processed tungsten oxide. , 2011, ACS applied materials & interfaces.

[6]  J. Yang,et al.  Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor , 2011, Advanced materials.

[7]  Zheng Fang,et al.  Transport properties of HfO_ {2- x} based resistive-switching memories , 2012 .

[8]  Sung-Yool Choi,et al.  Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films , 2010 .

[9]  C. Yoshida,et al.  High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application , 2007 .

[10]  Tuo-Hung Hou,et al.  Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode , 2010 .

[11]  Feng Miao,et al.  Observation of two resistance switching modes in TiO2 memristive devices electroformed at low current , 2011, Nanotechnology.

[12]  F. Zeng,et al.  Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. , 2009, Nano letters.

[13]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[14]  Jae Hyuck Jang,et al.  Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.

[15]  T. Fujimoto,et al.  X‐ray photoelectron spectroscopic analysis of HfSiON thin films , 2008 .

[16]  Qi Liu,et al.  Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. , 2010, ACS nano.

[17]  D. Jeong,et al.  Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook , 2011, Nanotechnology.

[18]  Seungwu Han,et al.  Electronic structure of Pt/HfO2 interface with oxygen vacancy , 2011 .

[19]  Jinfeng Kang,et al.  Understanding the intermediate initial state in TiO2−δ/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices , 2011 .

[20]  C. Morant,et al.  An XPS study of the initial stages of oxidation of hafnium , 1990 .

[21]  Hyunsang Hwang,et al.  Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices , 2012, Nanotechnology.

[22]  Sung-Yool Choi,et al.  Interface‐Engineered Amorphous TiO2‐Based Resistive Memory Devices , 2010 .

[23]  Malgorzata Sowinska,et al.  In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy , 2012 .