Design considerations/insights for memristor-based memory arrays

To achieve high data density with low power consumption, technology migration into nano and molecular scales have been proposed. Discovery of the memristor has enabled the realization of denser nano-scale logic and memory systems. This is due to the memristor distinctive characteristics such as storing the historic state of the current passing through it, nano-scale device, and low power consumption. This work describes the design considerations of using a memristor in realization of a memory cell. Based on this analysis, a new read/write circuit is proposed and verified using a simulation tool.

[1]  Uri C. Weiser,et al.  TEAM: ThrEshold Adaptive Memristor Model , 2013, IEEE Transactions on Circuits and Systems I: Regular Papers.

[2]  I. Yoo,et al.  2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications , 2007, 2007 IEEE International Electron Devices Meeting.

[3]  P. Cochat,et al.  Et al , 2008, Archives de pediatrie : organe officiel de la Societe francaise de pediatrie.

[4]  Matthew D. Pickett,et al.  Two‐ and Three‐Terminal Resistive Switches: Nanometer‐Scale Memristors and Memistors , 2011 .

[5]  L. Chua.  Memristor-The missing circuit element , 1971 .

[6]  Samiha Mourad,et al.  Digital logic implementation in memristor-based crossbars , 2009, 2009 International Conference on Communications, Circuits and Systems.

[7]  Khaled N. Salama,et al.  Memristor-based memory: The sneak paths problem and solutions , 2013, Microelectron. J..

[8]  Yuan Zhang,et al.  Fabrication and characterization of emerging nanoscale memory , 2009, 2009 IEEE International Symposium on Circuits and Systems.

[9]  S. N. Kosolobov,et al.  Long term operation of high quantum efficiency GaAs(Cs,O) photocathodes using multiple recleaning by atomic hydrogen , 2009 .

[10]  D. Stewart,et al.  The crossbar latch: Logic value storage, restoration, and inversion in crossbar circuits , 2005 .

[11]  Yiran Chen,et al.  Geometry variations analysis of TiO2 thin-film and spintronic memristors , 2011, 16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011).

[12]  Peng Li,et al.  Dynamical Properties and Design Analysis for Nonvolatile Memristor Memories , 2011, IEEE Transactions on Circuits and Systems I: Regular Papers.

[13]  S. Haddad,et al.  Non-volatile resistive switching for advanced memory applications , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[14]  Peng Li,et al.  Robust SRAM Design via Joint Sizing and Voltage Optimization Under Dynamic Stability Constraints , 2010, J. Low Power Electron..

[15]  J. Yang,et al.  Switching dynamics in titanium dioxide memristive devices , 2009 .

[16]  R. Williams,et al.  Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. , 2009, Small.