The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory

[1]  H. Hwang,et al.  Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory , 2014, Nanoscale Research Letters.

[2]  H. Hwang,et al.  Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory , 2014 .

[3]  H. Hwang,et al.  Non-Linear I-V Characteristics of TiOy Film by Optimizing Thickness and Trap Density for Selector-Less ReRAM , 2014 .

[4]  H. Hwang,et al.  Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse , 2013, 2013 IEEE International Electron Devices Meeting.

[5]  H. Hwang,et al.  Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications , 2013 .

[6]  Ya-Chin King,et al.  Temperature Sensing Scheme Through Random Telegraph Noise in Contact RRAM , 2013, IEEE Electron Device Letters.

[7]  Y. Nishi,et al.  Physics in designing desirable ReRAM stack structure — Atomistic recipes based on oxygen chemical potential control and charge injection/removal , 2012, 2012 International Electron Devices Meeting.

[8]  Shimeng Yu,et al.  Electrode/oxide interface engineering by inserting single-layer graphene: Application for HfOx-based resistive random access memory , 2012, 2012 International Electron Devices Meeting.

[9]  Sanjeev K. Gupta,et al.  Materials and Processing for Gate Dielectrics on Silicon Carbide (SiC) Surface , 2012 .

[10]  Byung Joon Choi,et al.  Engineering nonlinearity into memristors for passive crossbar applications , 2012 .

[11]  Hyunsang Hwang,et al.  Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices , 2011 .

[12]  An Chen.  Switching control of resistive switching devices , 2010 .

[13]  Jeremy Levy,et al.  Oxide Nanoelectronics on Demand , 2009, Science.

[14]  Jongwan Jung,et al.  Tunnel Barrier Engineering for Non-Volatile Memory , 2008 .

[15]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.