Photon counting and energy discriminating x-ray detectors - benefits and applications

Since a few years the direct detection of X-ray photons into electrical signals is possible by usage of highly absorbing photo conducting materials (e.g. CdTe) as detection layer of an underlying CMOS semiconductor X-ray detector. Even NDT energies up to 400 keV are possible today, as well. The image sharpness and absorption efficiency is improved by the replacement of the unsharp scintillation layer (as used at indirect detecting detectors) by a photo conducting layer of much higher thickness. If the read-out speed is high enough (ca. 50 – 100 ns dead time) single X-ray photons can be counted and their energy measured. Read-out noise and dark image correction can be avoided. By setting energy thresholds selected energy ranges of the X-ray spectrum can be detected or suppressed. This allows material discrimination by dual-energy techniques or the reduction of image contributions of scattered radiation, which results in an enhanced contrast sensitivity. To use these advantages in an effective way, a special calibration procedure has to be developed, which considers also time dependent processes in the detection layer. This contribution presents some of these new properties of direct detecting digital detector arrays (DDAs) and shows first results on testing fiber reinforced composites as well as first approaches to dual energy imaging.